| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| H5ANBG8NABR-VKCR | SDRAM存储器 |
MICRON/美光 |
BGA |
20+ |
2000 |
|||
| K4Z80325BC-HC16 | 存储IC |
SAMSUNG/三星 |
BGA |
22+ |
8000 |
|||
| MT53E2G64D8TN-046AAT:A | MICRON/美光 |
BGA |
22+ |
1500 |
||||
| H5AN8G6NCJR-VKC | 存储IC |
SKHYNIX/海力士 |
BGA |
20+ |
4000 |
|||
| MTFC128GAVATTC-AAT | MICRON/美光 |
BGA |
22+ |
1500 |
||||
| MT40A2G16SKL-062E:B | SDRAM存储器 |
MICRON/美光 |
BGA |
22+ |
8000 |
|||
| H5ANBG8NABR-XNC | SKHYNIX/海力士 |
BGA |
22+ |
610 |
||||
| SDIN8DE2-4G | 存储IC |
SANDISK/闪迪 |
BGA |
17+ |
800 |
|||
| K3UH5H50MM-THCL | SAMSUNG/三星 |
BGA |
22+ |
200 |
||||
| H5TC4G63AFR-PBA | SKHYNIX/海力士 |
BGA |
15+ |
8000 |
||||
| MT40A1G8SA-062E:R | MICRON/美光 |
BGA |
21+ |
3000 |
||||
| MT40A4G8BAF-062E:B | 存储IC |
MICRON/美光 |
BGA |
22+ |
1200 |
|||
| CXDQ3BFAM-CG | CXMT/长鑫 |
BGA |
20+ |
1000 |
||||
| MSD95PJVM-3-005D | MSTAR/晨星半导体 |
BGA |
18+ |
3100 |
||||
| MTFC1TAYAXHE-WT | THSHIBA |
BGA |
23+ |
200 |
||||
| S34ML04G300BHI00O | SKYHIGH/天海存储 |
BGA |
21+ |
1342 |
||||
| MSD95M0D-3-005D | MSTAR/晨星半导体 |
BGA |
17+ |
2100 |
||||
| MT40A2G16TBB-062E:F | MICRON/美光 |
BGA |
22+ |
1000 |
||||
| NT5AD256M16D4-HR | DDR存储器 |
NANYA/南亚 |
BGA |
20+ |
2200 |
|||
| H5ANBG8NCBR-XNC | SKHYNIX/海力士 |
BGA |
22+ |
2500 |
||||
| KLUEG4RHYE-B0EQ | SAMSUNG/三星 |
BGA |
23+ |
100 |
||||
| SDINDDH4-128G | 内存芯片 |
SANDISK/闪迪 |
BGA |
20+ |
610 |
|||
| MT40A4G8BAF-062E:B | 接口IC |
MICRON/美光 |
BGA |
22+ |
1190 |
|||
| SDINADF4-32G | 存储IC |
SANDISK/闪迪 |
BGA |
17+ |
15200 |
|||
| K4AAG165WB-MCTD | 存储IC |
SAMSUNG/三星 |
BGA |
18+ |
11200 |
|||
| H5GQ2H24AFR-R0C | 工控元件 |
SKHYNIX/海力士 |
BGA |
17+ |
5588 |
|||
| THGBMDG5D1LBAIT | THSHIBA |
BGA |
18+ |
5200 |
||||
| RT8298ZSP | 其他被动元件 |
RICHTEK/立锜 |
SOP |
18+ |
19000 |
|||
| MSD95PJVM-3-00DW | MSTAR/晨星半导体 |
BGA |
18+ |
524 |
||||
| NT5TU32M16DG-BD | 内存芯片 |
NANYA/南亚 |
BGA |
11+ |
12000 |